MOSFET Metal oxide semiconductor FET.

          MOSFET 
Metal oxide semiconductor FET.

§   Similar to JFET.

§   A metal oxide insulator is placed @ the gate to obtain a high input impedance @ the

gate

–         gate input impedance approx. 10¹⁴Ω.

Use of insulator as described above yields a low gate-to-channel capacitance.

–          If too much static electricity builds up on the gate, then the MOSFET may be damaged.